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100V|75A (Ta)|100W (Tc)
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MOSFET N-CH 100V LDPAK
Specifications
- Brand
- Renesas Electronics America
- Package
- 4-LDPAK
- Packaging
- —
- Weight
- —
Total Inventory
239pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how H7N1002LS-E from Renesas Electronics America fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | Renesas Electronics America | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 37.5A, 10V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9700pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 100W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 4-LDPAK | |
| Package / Case | SC-83 |
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Datasheet & Documents
h7n1002lstl-e.pdf
PDF Document · 11 pages
