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4170Vrms|1000% @ 10mA
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OPTOISO 4.17KV DARL W/BASE 6DIP
Specifications
- Brand
- ON Semiconductor
- Package
- 6-DIP (0.300", 7.62mm)
- Packaging
- —
- Weight
- —
Total Inventory
453pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how H11G2VM_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Number of Channels | 1 | |
| Voltage - Isolation | 4170Vrms | |
| Current Transfer Ratio (Min) | 1000% @ 10mA | |
| Current Transfer Ratio (Max) | - | |
| Turn On / Turn Off Time (Typ) | 5µs, 100µs | |
| Rise / Fall Time (Typ) | - | |
| Input Type | DC | |
| Output Type | Darlington with Base | |
| Voltage - Output (Max) | 80V | |
| Current - Output / Channel | - | |
| Voltage - Forward (Vf) (Typ) | 1.3V | |
| Current - DC Forward (If) (Max) | 60mA | |
| Vce Saturation (Max) | 1V | |
| Operating Temperature | -40°C ~ 100°C | |
| Mounting Type | Through Hole | |
| Package / Case | 6-DIP (0.300", 7.62mm) | |
| Supplier Device Package | 6-DIP |
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