Heisener Electronics
BOM

H11G2M_1

4170Vrms|1000% @ 10mA
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

OPTOISO 4.17KV DARL W/BASE 6DIP

Specifications

Brand
ON Semiconductor
Package
6-DIP (0.300", 7.62mm)
Packaging
—
Weight
—

Total Inventory

2,771pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how H11G2M_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)1000% @ 10mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)5µs, 100µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)80V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.3V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)1V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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