Heisener Electronics
BOM

H11F2W_1

5300Vrms|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

Specifications

Brand
ON Semiconductor
Package
6-DIP (0.400", 10.16mm)
Packaging
—
Weight
—

Total Inventory

471pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how H11F2W_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)-
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)25µs, 25µs (Max)
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeMOSFET
Voltage - Output (Max)30V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.3V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)-
Operating Temperature-55°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.400", 10.16mm)
Supplier Device Package6-DIP

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Datasheet & Documents

h11f3w.pdf

PDF Document · 10 pages

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Datasheet Preview

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