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20V|10.1A (Ta)|3.6W
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MOSFET 2 N-CH 20V 10.1A 4QFN
Specifications
- Brand
- Renesas Electronics America
- Package
- 4-VDFN
- Packaging
- —
- Weight
- —
Total Inventory
103pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GWS9294_1 from Renesas Electronics America fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Renesas Electronics America Inc. | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 6.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4V | |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V | |
| Power - Max | 3.6W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-VDFN | |
| Supplier Device Package | 4-QFN (2x2) |
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Datasheet & Documents
gws9294.pdf
PDF Document · 9 pages
