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1000V|60A|170W
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IGBT 1000V 60A 170W TO3P LH
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-3PL
- Packaging
- —
- Weight
- —
Total Inventory
403pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GT60N321-Q from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 1000V | |
| Current - Collector (Ic) (Max) | 60A | |
| Current - Collector Pulsed (Icm) | 120A | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A | |
| Power - Max | 170W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | 330ns/700ns | |
| Test Condition | - | |
| Reverse Recovery Time (trr) | 2.5µs | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3PL | |
| Supplier Device Package | TO-3P(LH) |
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