Heisener Electronics
BOM

GSID100A120T2C1

1200V|200A|640W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

SILICON IGBT MODULES

Specifications

Brand
Global Power Technologies Group
Package
Module
Packaging
—
Weight
—

Total Inventory

123pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GSID100A120T2C1 from Global Power Technologies Group fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGlobal Power Technologies Group
SeriesAmp+™
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)200A
Power - Max640W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce13.7nF @ 25V
InputThree Phase Bridge Rectifier
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Datasheet & Documents

gsid100a120t2c1.pdf

PDF Document · 8 pages

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Datasheet Preview

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