Heisener Electronics
BOM

GPAS1002-MNG_1

100V|10A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 100V 10A TO263AB

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging
—
Weight
—

Total Inventory

371pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GPAS1002-MNG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.1V @ 10A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F50pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB (D²PAK)
Operating Temperature - Junction-55°C ~ 150°C

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