Heisener Electronics
BOM

GPA802HC0G_1

100V|8A
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DIODE GEN PURP 100V 8A TO220AC

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-220-2
Packaging
—
Weight
—

Total Inventory

292pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GPA802HC0G_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1V @ 8A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F50pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 150°C

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