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GP2M020A050N

500V|20A (Tc)|312W (Tc)
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MOSFET N-CH 500V 20A TO3PN

Specifications

Brand
Global Power Technologies Group
Package
TO-3PN
Packaging
—
Weight
—

Total Inventory

167pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GP2M020A050N from Global Power Technologies Group fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2880pF @ 25V
FET Feature-
Power Dissipation (Max)312W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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Datasheet & Documents

gp2m020a050n.pdf

PDF Document · 5 pages

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