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650V|30A (DC)
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DIODE SILICON CARBIDE
Specifications
- Brand
- Global Power Technologies Group
- Package
- TO-220-2
- Packaging
- —
- Weight
- —
Total Inventory
276pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GP2D008A065A from Global Power Technologies Group fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Global Power Technologies Group | |
| Series | - | |
| Diode Type | Silicon Carbide Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Current - Average Rectified (Io) | 30A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.45V @ 30A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0ns | |
| Current - Reverse Leakage @ Vr | 9µA @ 650V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | TO-220-2 | |
| Operating Temperature - Junction | - |
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