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900V|10A (Tc)|312W (Tc)
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MOSFET N-CH 900V 10A TO3PN
Specifications
- Brand
- Global Power Technologies Group
- Package
- TO-3PN
- Packaging
- —
- Weight
- —
Total Inventory
384pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GP1M010A080N from Global Power Technologies Group fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Global Power Technologies Group | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2336pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 312W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3PN | |
| Package / Case | TO-3P-3, SC-65-3 |
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Datasheet & Documents
gp1m010a080n.pdf
PDF Document · 5 pages
