Heisener Electronics
BOM

GP1M008A025FG

250V|8A (Tc)|17.3W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 250V 8A TO220F

Specifications

Brand
Global Power Technologies Group
Package
TO-220F
Packaging
—
Weight
—

Total Inventory

247pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GP1M008A025FG from Global Power Technologies Group fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds423pF @ 25V
FET Feature-
Power Dissipation (Max)17.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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Datasheet & Documents

gp1m008a025hg.pdf

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