GP1M005A050HS

500V|4A (Tc)|92.5W (Tc)

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MOSFET N-CH 500V 4A TO220

431pcs

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Purchase Quantity

MOQ: 1 pcs

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Manufacturer	Global Power Technologies Group
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.85Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	602pF @ 25V
FET Feature	-
Power Dissipation (Max)	92.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3