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GE2X10MPS06D

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Part Number

GE2X10MPS06D

Manufacturer

GeneSiC Semiconductor

Description

DIODE ARR SIC 650V 23A TO247-3

Lifecycle

Obsolete

RoHS

No RoHS Information

EDA/CAD Models

GE2X10MPS06D PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:0 pcs

运送服务：

GE2X10MPS06D 规格

Manufacturer
GeneSiC Semiconductor
Series
SiC Schottky MPS™
Diode Configuration
1 Pair Common Cathode
Diode Type
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
23A (DC)
Voltage - Forward (Vf) (Max) @ If
-
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Operating Temperature - Junction
-55°C ~ 175°C
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3

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