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1.7V ~ 2V
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SPI NAND FLASH
Specifications
- Brand
- GigaDevice Semiconductor (HK) Limited
- Package
- 8-WDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
464pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GD5F4GQ4RBYIGR from GigaDevice Semiconductor (HK) Limited fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GigaDevice Semiconductor (HK) Limited | |
| Series | - | |
| Memory Type | Non-Volatile | |
| Memory Format | FLASH | |
| Technology | FLASH - NAND | |
| Memory Size | 4Gb (512M x 8) | |
| Memory Interface | SPI - Quad I/O | |
| Clock Frequency | 120MHz | |
| Write Cycle Time - Word, Page | - | |
| Access Time | - | |
| Voltage - Supply | 1.7V ~ 2V | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-WDFN Exposed Pad | |
| Supplier Device Package | 8-WSON (6x8) |
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Datasheet & Documents
gd25ve32cvigr.pdf
PDF Document · 28 pages
