Heisener Electronics
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GD30MPS12H

1200 V|55A
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DIODE SIL CARB 1.2KV 55A TO247-2

Specifications

Brand
GeneSiC Semiconductor
Package
TO-247-2
Packaging
—
Weight
—

Total Inventory

3,387pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GD30MPS12H from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerGeneSiC Semiconductor
SeriesSiC Schottky MPS™
Diode TypeSiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)55A
Voltage - Forward (Vf) (Max) @ If1.8 V @ 30 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr20 µA @ 1200 V
Capacitance @ Vr, F1101pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-247-2
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C

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