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650 V|51A
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DIODE SIL CARB 650V 51A TO263-7
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging
- —
- Weight
- —
Total Inventory
1,989pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GD30MPS06J from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | SiC Schottky MPS™ | |
| Diode Type | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 51A | |
| Voltage - Forward (Vf) (Max) @ If | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | - | |
| Capacitance @ Vr, F | 735pF @ 1V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Supplier Device Package | TO-263-7 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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