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650 V|108A (DC)
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DIODE MOD SIC 650V 108A SOT227
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- SOT-227-4, miniBLOC
- Packaging
- —
- Weight
- —
Total Inventory
390pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GD2X100MPS06N from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | SiC Schottky MPS™ | |
| Diode Configuration | 2 Independent | |
| Diode Type | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) (per Diode) | 108A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 100 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Supplier Device Package | SOT-227 |
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