Heisener Electronics
BOM

GD25Q127CYIGR

2.7V ~ 3.6V
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

NOR FLASH

Specifications

Brand
GigaDevice Semiconductor (HK) Limited
Package
8-WDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

410pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GD25Q127CYIGR from GigaDevice Semiconductor (HK) Limited fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGigaDevice Semiconductor (HK) Limited
Series-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size128Mb (16M x 8)
Memory InterfaceSPI - Quad I/O
Clock Frequency104MHz
Write Cycle Time - Word, Page12µs, 2.4ms
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)

Recommended Products

RWR89SR499DSB12

RWR89SR499DSB12

RES 0.499 OHM 3W 0.5% WW AXIAL

RWR80N11R0FRB12

RWR80N11R0FRB12

RES 11 OHM 2W 1% WW AXIAL

MKP385443250JYP5T0

MKP385443250JYP5T0

CAP FILM 0.43UF 5% 2.5KVDC RAD

1210J1K00121FAT

1210J1K00121FAT

CAP CER 120PF 1KV C0G/NP0 1210

C0805C183J5RAC7800

C0805C183J5RAC7800

CAP CER 0.018UF 50V X7R 0805

MK11-1A66D-500W

MK11-1A66D-500W

SENSOR REED SWITCH SPST-NO CABLE

464W-GAR24H-NAO

464W-GAR24H-NAO

PMI .250"" LED 24V WIRE DIFF GREE

A3P1000L-PQG208I

A3P1000L-PQG208I

IC FPGA 154 I/O 208QFP

BD440S

BD440S

TRANS PNP 60V 4A TO-126

GSM12DRSN

GSM12DRSN

CONN EDGE DUAL FMALE 24POS 0.156