Heisener Electronics
BOM

GD25D10CEIGR

2.7V ~ 3.6V
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

NOR FLASH

Specifications

Brand
GigaDevice Semiconductor (HK) Limited
Package
8-XFDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

4,215pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GD25D10CEIGR from GigaDevice Semiconductor (HK) Limited fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGigaDevice Semiconductor (HK) Limited
Series-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size1Mb (128K x 8)
Memory InterfaceSPI - Dual I/O
Clock Frequency100MHz
Write Cycle Time - Word, Page50µs, 4ms
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case8-XFDFN Exposed Pad
Supplier Device Package8-USON (2x3)

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Datasheet & Documents

gd25ve32cvigr.pdf

PDF Document · 28 pages

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Datasheet Preview

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