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1200 V|29A
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DIODE SIL CARB 1.2KV 29A TO252-2
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging
- —
- Weight
- —
Total Inventory
7,641pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GD10MPS12E from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | SiC Schottky MPS™ | |
| Diode Type | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 29A | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V | |
| Capacitance @ Vr, F | 367pF @ 1V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
| Supplier Device Package | TO-252-2 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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