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GB01SLT12-252

1200V|1A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE SILICON 1.2KV 1A TO252

Specifications

Brand
GeneSiC Semiconductor
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
—
Weight
—

Total Inventory

301pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how GB01SLT12-252 from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.8V @ 1A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr2µA @ 1200V
Capacitance @ Vr, F69pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
Operating Temperature - Junction-55°C ~ 175°C

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Datasheet & Documents

gb01slt12-252.pdf

PDF Document · 7 pages

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