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3300V|300mA (DC)
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DIODE SCHOTTKY 3.3KV 300MA DO214
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- DO-214AA, SMB
- Packaging
- —
- Weight
- —
Total Inventory
137pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GAP3SLT33-214 from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| Diode Type | Silicon Carbide Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 3300V | |
| Current - Average Rectified (Io) | 300mA (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 2.2V @ 300mA | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0ns | |
| Current - Reverse Leakage @ Vr | 10µA @ 3300V | |
| Capacitance @ Vr, F | 42pF @ 1V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AA, SMB | |
| Supplier Device Package | DO-214AA | |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Datasheet & Documents
gap3slt33-214.pdf
PDF Document · 6 pages
