Contact
Send MessageGAN080-650EBEZ
650 V|29A (Ta)|240W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
650 V, 80 MOHM GALLIUM NITRIDE (
Specifications
- Brand
- Nexperia
- Package
- DFN8080-8
- Packaging
- —
- Weight
- —
Total Inventory
6,039pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how GAN080-650EBEZ from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Nexperia | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V | |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 6V | |
| Vgs(th) (Max) @ Id | 2.5V @ 30.7mA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 6 V | |
| Vgs (Max) | +7V, -6V | |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 240W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Supplier Device Package | DFN8080-8 | |
| Package / Case | 8-VDFN Exposed Pad |
Recommended Products
RES SMD 12.4K OHM 0.1% 1/4W 1206
CAP CER 9.1PF 250V C0G/NP0 RAD
SWITCH PUSH SPST-NO 10A 110V
IC OSC CLOCK QD FREQ 10CLCC
FUSE 3.6KV 31.5AMP 2"" DIN
.050'' BOARD SPACERS
CONN D-SUB RCPT 15POS VERT SLDR
CONN RCPT 6POS PANEL MNT W/SCKT
CONN PLUG HSG MALE 42POS INLINE
CONN RCPT HSG FMALE 37POS PNL MT
