Heisener Electronics
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G3R60MT07D

750 V|-|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

750V 60M TO-247-3 G3R SIC MOSFET

Specifications

Brand
GeneSiC Semiconductor
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

8,604pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how G3R60MT07D from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerGeneSiC Semiconductor
SeriesG3R™
FET Type-
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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