G3R40MT12D
1200 V|71A (Tc)|333W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠
SIC MOSFET N-CH 71A TO247-3
规格参数
- 品牌
- GeneSiC Semiconductor
- 封装
- TO-247-3
- 包装方式
- —
库存总量
3,108个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 GeneSiC Semiconductor 的 G3R40MT12D 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | GeneSiC Semiconductor | |
| Series | G3R™ | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V | |
| Vgs(th) (Max) @ Id | 2.69V @ 10mA | |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V | |
| Vgs (Max) | ±15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 333W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
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