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3300 V|63A (Tc)|536W (Tc)
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3300V 50M TO-247-4 SIC MOSFET
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- TO-247-4
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how G2R50MT33K from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | G2R™ | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 3300 V | |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V | |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 20 V | |
| Vgs (Max) | +25V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7301 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 536W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4 | |
| Package / Case | TO-247-4 |
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