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1000V|8A
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DIODE GEN PURP 1KV 8A TO277-3
Specifications
- Brand
- ON Semiconductor
- Package
- TO-277, 3-PowerDFN
- Packaging
- —
- Weight
- —
Total Inventory
33,353pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FS8M_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | Automotive, AEC-Q101 | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1000V | |
| Current - Average Rectified (Io) | 8A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 8A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 3.37µs | |
| Current - Reverse Leakage @ Vr | 5µA @ 1000V | |
| Capacitance @ Vr, F | 118pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-277, 3-PowerDFN | |
| Supplier Device Package | TO-277-3 | |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Datasheet & Documents
fs8k.pdf
PDF Document · 6 pages
