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FQT4N20LTF

200V|850mA (Tc)|2.2W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 200V 0.85A SOT-223

Specifications

Brand
Fairchild/ON Semiconductor
Package
SOT-223-4
Packaging
—
Weight
—

Total Inventory

2,121,468pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQT4N20LTF from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1.35 Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 25V
FET Feature-
Power Dissipation (Max)2.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-4
Package / CaseTO-261-4, TO-261AA

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Datasheet & Documents

fqt4n20ltf.pdf

PDF Document · 10 pages

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