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FQT1N80TF-WS

800V|200mA (Tc)|2.1W (Tc)
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MOSFET N-CH 800V 0.2A SOT-223

Specifications

Brand
ON Semiconductor
Package
SOT-223-3
Packaging
—
Weight
—

Total Inventory

495pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQT1N80TF-WS from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds195pF @ 25V
FET Feature-
Power Dissipation (Max)2.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-3
Package / CaseTO-261-3

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Datasheet & Documents

fqt1n80tf-ws.pdf

PDF Document · 8 pages

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