Heisener Electronics
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FQPF3P50_1

500V|1.9A (Tc)|39W (Tc)
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MOSFET P-CH 500V 1.9A TO-220F

Specifications

Brand
ON Semiconductor
Package
TO-220F
Packaging
—
Weight
—

Total Inventory

317pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQPF3P50_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.9Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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Interface

Datasheet & Documents

fqpf3p50.pdf

PDF Document · 8 pages

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Datasheet Preview

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