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FQPF3N80

800V|1.8A (Tc)|39W (Tc)
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MOSFET N-CH 800V 1.8A TO-220F

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-220F
Packaging
—
Weight
—

Total Inventory

14,112pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQPF3N80 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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Datasheet & Documents

fqpf3n80.pdf

PDF Document · 8 pages

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