Heisener Electronics
BOM

FQPF2N60C_1

600V|2A (Tc)|23W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 2A TO-220F

Specifications

Brand
ON Semiconductor
Package
TO-220F
Packaging
—
Weight
—

Total Inventory

497pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQPF2N60C_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 25V
FET Feature-
Power Dissipation (Max)23W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

Recommended Products

CMF556K0400DHBF

CMF556K0400DHBF

RES 6.04K OHM 1/2W 0.5% AXIAL

RNF18FTD8K87

RNF18FTD8K87

RES 8.87K OHM 1/8W 1% AXIAL

HSZ102MAQBRCKR

HSZ102MAQBRCKR

CAP CER 1000PF 500V Y5T RADIAL

G6WK-1P-DC24

G6WK-1P-DC24

RELAY RF SPDT 10MA 24V

VE-B4W-IW-F1

VE-B4W-IW-F1

DC DC CONVERTER 5.5V 100W

VI-J61-MZ-F2

VI-J61-MZ-F2

DC DC CONVERTER 12V 25W

THS4140IDGNG4

THS4140IDGNG4

IC OPAMP DIFF 1 CIRCUIT 8MSOP

BCS-146-L-D-HE-086

BCS-146-L-D-HE-086

BOX CONNECTOR SOCKET STRIP

95645-468HLF

95645-468HLF

HEADER BERGSTIK

1877067-9

1877067-9

CONN RCPT 6POS 0 DEG GRAY/WHITE

Datasheet & Documents

fqpf2n60c.pdf

PDF Document · 12 pages

Download

Datasheet Preview

Download