Heisener Electronics
BOM

FQP7P20_1

200V|7.3A (Tc)|90W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 200V 7.3A TO-220

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

267pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQP7P20_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs690mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds770pF @ 25V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

Recommended Products

RNC50J3160FSB14

RNC50J3160FSB14

RES 316 OHM 1/10W 1% AXIAL

YR1B47R5CC

YR1B47R5CC

RES 47.5 OHM 1/4W 0.1% AXIAL

MFR100FTF52-787R

MFR100FTF52-787R

RES MF 1W 1% AXIAL

C1206C222GMGEC7210

C1206C222GMGEC7210

CAP CER 1206 2.2NF 63V C0G 2%

C1210J474K1RAC7800

C1210J474K1RAC7800

CAP CER 0.47UF 100V X7R 1210

DP-102-M

DP-102-M

SENSOR PRESSURE -0.1 - 1MPA

AT25640B-MAPDGV-E

AT25640B-MAPDGV-E

5MHZ AUTO GRADE1 8-UDFN

G195TNRPI25

G195TNRPI25

ACCY MAGN MOUNT 3/4 A195 RTNM

ESW-104-24-S-S-LL

ESW-104-24-S-S-LL

ELEVATED SOCKET STRIPS

CTVP00RW-23-55SA-LC

CTVP00RW-23-55SA-LC

CONN RCPT HSG FMALE 55POS PNL MT

Datasheet & Documents

fqp7p20.pdf

PDF Document · 8 pages

Download

Datasheet Preview

Download