Contact
Send MessageFQP6N80_1
800V|5.8A (Tc)|158W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 800V 5.8A TO-220
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
222pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQP6N80_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 2.9A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 158W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
RES 715 OHM 1/2W 1% AXIAL
RES SMD 15.8 OHM 0.5% 1/16W 0402
FIXED IND 180NH 50MA 600 MOHM
MEMS OSC PRG SSXO LVCMOS DS 2.8V
CAP CER 33PF 4KV C0G/NP0 2220
CAP CER 1.8PF 250V C0G/NP0 0402
DC DC CONVERTER 28V 250W
IC FLASH 16M PARALLEL 80PQFP
IC DGT POT 100KOHM 100TAP 8TSSOP
CONN RCPT HSG FMALE 5POS INLINE
Datasheet & Documents
fqp6n80.pdf
PDF Document · 8 pages
