Heisener Electronics
BOM

FQP4P25_1

250V|4A (Tc)|75W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 250V 4A TO-220

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

429pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQP4P25_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

Recommended Products

RLR05C2740FSRSL

RLR05C2740FSRSL

RES 274 OHM 1% 1/8W AXIAL

RN60C4222FRE6

RN60C4222FRE6

RES 42.2K OHM 1/4W 1% AXIAL

9T12062A1210FBHFT

9T12062A1210FBHFT

RES SMD 121 OHM 1% 1/8W 1206

MCR18ERTF40R2

MCR18ERTF40R2

RES SMD 40.2 OHM 1% 1/4W 1206

AISC-1210H-1R2N-T

AISC-1210H-1R2N-T

FIXED IND 1.2UH 2.1A 92 MOHM SMD

2220Y6300823JXR

2220Y6300823JXR

CAP CER 0.082UF 630V X7R 2220

2225Y1K00150KCR

2225Y1K00150KCR

CAP CER 15PF 1KV C0G/NP0 2225

LTC1779ES6-TRPBF

LTC1779ES6-TRPBF

IC REG BUCK ADJ 250MA TSOT23-6

1N6016UR_1

1N6016UR_1

ZENER DIODE

MS3452L28-20S

MS3452L28-20S

CONN RCPT 14POS BOX MNT W/SCKT

Datasheet & Documents

fqp4p25.pdf

PDF Document · 8 pages

Download

Datasheet Preview

Download