Contact
Send MessageFQP4N90_1
900V|4.2A (Tc)|140W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 900V 4.2A TO-220
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
478pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQP4N90_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 2.1A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 140W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
RES MF 1/2W 0.1% AXIAL
RES SMD 19.6 OHM 1% 1.5W 2512
MEMS OSC XO 133.3000MHZ LVPECL
MEMS OSC PROG XO LVCMOS 3V 20PPM
CAP CER 56PF 25V C0G/NP0 RADIAL
IC SRAM 128K PARALLEL 68PLCC
RES 4.99K OHM 1/4W 0.01% AXIAL
RES 1.1K OHM 0.3W 0.1% AXIAL
CONN TERM BLOCK 7.5MM 6POS PCB
BOX CONNECTOR SOCKET STRIP
Datasheet & Documents
fqp4n90.pdf
PDF Document · 8 pages
