Contact
Send MessageFQP4N80_1
800V|3.9A (Tc)|130W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 800V 3.9A TO-220
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
2,621pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQP4N80_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.95A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 130W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
RES SMD 768K OHM 1% 3/4W 2010
MEMS OSC PROG VCXO LVCMOS 1.8V
CAP CER 0.22UF 63V X7R 1210
SSR RELAY SPST-NO 50A 48-660V
TVS DIODE 14V 25.8V DO204AC
.050'' X .050 TERMINAL STRIP
.025" BOARD SPACERS
.025" BOARD SPACERS
CONN CARDEDGE MALE 70POS 0.100
CONN EDGE DUAL FMALE 14POS 0.100
Datasheet & Documents
fqp4n80.pdf
PDF Document · 10 pages
