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FQP3N90_1

900V|3.6A (Tc)|130W (Tc)
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MOSFET N-CH 900V 3.6A TO-220

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

288pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQP3N90_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.25Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds910pF @ 25V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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Datasheet & Documents

fqp3n90.pdf

PDF Document · 8 pages

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