
Contact
Send MessageFQP3N60_1
600V|3A (Tc)|75W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 600V 3A TO-220
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
265pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQP3N60_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 75W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products

MEMS OSC XO 33.3330MHZ LVCMOS LV

MEMS OSC XO 4.0000MHZ H/LV-CMOS

CAP CER 0.047UF 630V X7R 1812

CAP CER 6800PF 100V X7R 1210

CAP CER 0.022UF 10V U2J 1210

SWITCH SNAP ACT SPST-NO 16A 250V

SWITCH SNAP ACTION SPDT 16A 125V

DC DC CONVERTER +/-15V 3W

DC DC CONVERTER 20V -5V 2W

BOX CONNECTOR SOCKET STRIP
Datasheet & Documents
fqp3n60.pdf
PDF Document · 8 pages










