Contact
Send MessageFQP2N60C_1
600V|2A (Tc)|54W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 600V 2A TO-220
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
19,069pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQP2N60C_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 54W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
RES 1.58K OHM 1% 1/4W 1206
FIXED IND 470UH 820MA 850 MOHM
MEMS OSC XO 4.0000MHZ LVCM LVTTL
XTAL OSC XO 4.1943MHZ HCMOS TTL
MEMS OSC PRG SSXO LVCMOS DS 1.8V
CAP CER 470PF 10V C0G/NP0 0603
CONN MAG TERM 26-30AWG PCB
35 SIL HORIZ PIN HDR
CONN BASE BOTTOM ENTRY SZ5
CONN PWR JACK 1.7X4MM SOLDER
Datasheet & Documents
fqpf2n60c.pdf
PDF Document · 12 pages
