Contact
Send MessageFQP1N60_1
600V|1.2A (Tc)|40W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 600V 1.2A TO-220
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
190pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQP1N60_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 600mA, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 40W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
RES 2.77K OHM 1/10W .1% AXIAL
RES METAL OXIDE 1W 5% AXIAL
MEMS OSC XO 60.0000MHZ H/LV-CMOS
CAP FILM 0.27UF 5% 2.5KVDC RAD
CAP CER 4.7PF 250V C0G/NP0 1808
FUSE GLASS 500MA 250VAC 3AB 3AG
CONN PLUG HSG MALE 37POS INLINE
CONN RCPT HSNG MALE 11POS PNL MT
CONN EDGE DUAL FMALE 44POS 0.156
IC SRAM 1MBIT PARALLEL 44SOJ
Datasheet & Documents
fqp1n60.pdf
PDF Document · 8 pages
