FQI4N80TU

800V|3.9A (Tc)|3.13W (Ta), 130W (Tc)

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MOSFET N-CH 800V 3.9A I2PAK

9,468个

12小时发货

购买数量

起订量：1 个

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Manufacturer	Fairchild/ON Semiconductor
Series	QFET?
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.6 Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	880pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 130W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA