Heisener Electronics
BOM

FQI2N90TU

900V|2.2A (Tc)|3.13W (Ta), 85W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 900V 2.2A I2PAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
I2PAK
Packaging
—
Weight
—

Total Inventory

3,248pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQI2N90TU from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.2 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

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