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FQD5N60CTM_F080

600V|2.8A (Tc)|2.5W (Ta), 49W (Tc)
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MOSFET N-CH 600V 2.8A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
D-Pak
Packaging
—
Weight
—

Total Inventory

7,408pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQD5N60CTM_F080 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 49W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fqd5n60ctm_f080.pdf

PDF Document · 9 pages

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