FQD5N60CTM_F080

600V|2.8A (Tc)|2.5W (Ta), 49W (Tc)

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MOSFET N-CH 600V 2.8A DPAK

7,408pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	Fairchild/ON Semiconductor
Series	QFET?
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 49W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63