Heisener Electronics
BOM

FQD19N10TM_F080_1

100V|15.6A (Tc)|2.5W (Ta), 50W (Tc)
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MOSFET N-CH 100V 15.6A DPAK

Specifications

Brand
ON Semiconductor
Package
D-Pak
Packaging
—
Weight
—

Total Inventory

478pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQD19N10TM_F080_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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