Heisener Electronics
BOM

FQD17P06TM_1

60V|12A (Tc)|2.5W (Ta), 44W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 60V 12A DPAK

Specifications

Brand
ON Semiconductor
Package
D-Pak
Packaging
—
Weight
—

Total Inventory

410pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQD17P06TM_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Recommended Products

RLR32C2200GRBSL

RLR32C2200GRBSL

RES 220 OHM 2% 1W AXIAL

SIT5357AI-FA25JY

SIT5357AI-FA25JY

OSC DCTCXO PROGRAMMABLE

VJ0805A392GXBRW1BC

VJ0805A392GXBRW1BC

CAP CER 3900PF 100V C0G/NP0 0805

T355G106K035AT

T355G106K035AT

CAP TANT 10UF 10% 35V RADIAL

VI-B0L-MY-F3

VI-B0L-MY-F3

DC DC CONVERTER 28V 50W

FTS-150-04-S-D

FTS-150-04-S-D

.050 X .050 C.L. LOW PROFILE TER

0936000348

0936000348

POLYAMIDE CABLE GLAND

TV07RK-11-19P

TV07RK-11-19P

CONN RCPT MALE 19POS GOLD CRIMP

8D519F32PN

8D519F32PN

8D 32C 32#20 PIN PLUG

BQ25960YBGT

BQ25960YBGT

PROTOTYPE

Datasheet & Documents

fqd17p06tm.pdf

PDF Document · 11 pages

Download

Datasheet Preview

Download