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FQD17N08LTM

80V|12.9A (Tc)|2.5W (Ta), 40W (Tc)
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MOSFET N-CH 80V 12.9A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-252, (D-Pak)
Packaging
—
Weight
—

Total Inventory

3,088pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FQD17N08LTM from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesQFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs100 mOhm @ 6.45A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.5nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fqd17n08ltm.pdf

PDF Document · 10 pages

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