Contact
Send MessageFQB6N60TM_1
600V|6.2A (Tc)|3.13W (Ta), 130W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 600V 6.2A D2PAK
Specifications
- Brand
- ON Semiconductor
- Package
- D²PAK (TO-263AB)
- Packaging
- —
- Weight
- —
Total Inventory
422pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FQB6N60TM_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | QFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.1A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D²PAK (TO-263AB) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Recommended Products
RES 1.15 OHM 1W 1% WW AXIAL
CRYSTAL 27.000000MHZ 20PF SMD
MEMS OSC PROG VCXO LVCMOS 2.8V
CAP FILM 0.33UF 10% 310VAC RAD
CAP CER 0.3PF 2000V C0G/NP0 1111
CPS16-NC00A10-SNCCWTWF-AI0YRVAR-W1021-S
SWITCH PUSH SPST-NC 100MA 42V
IC REG CONV BATTERY 1OUT SOT23-5
IC MCU 8BIT 128KB FLASH 64QFN
.200 HIGH POWER BLOCK ASSEMBLY
ZENER DIODE
Datasheet & Documents
fqb6n60tm.pdf
PDF Document · 9 pages
